Toshiba Launches New Embedded NAND Flash Memory Modules Using 9nm Second Generation Proce Technology

Toshiba Launches New Embedded NAND Flash Memory Modules

Using 19nm Second Generation Process Technology

New Products Compliant with JEDEC e MMC Version 5.0

31 Oct, 2013

New Embedded NAND Flash Memory Modules

TOKYO Toshiba Corporation (TOKYO: 6502) today announced the launch of new embedded NAND flash memory modules integrating NAND chips fabricated with 19nm second generation process technology. The module is fully compliant with the latest e MMCTM [1] standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Mass production will start from the end of November.

Demand continues to grow for large density NAND flash memory chips that can support high resolution video and deliver enhanced storage. This is particularly true in the area of embedded memories with a controller function, which minimize development requirements and ease integration into system designs. Toshiba is meeting this demand by reinforcing its line-up of high density memory products.

The company's new 32-gigabyte (GB) embedded device integrates four 64Gbit (equal to 8GB) NAND chips fabricated with Toshibas cutting-edge 19nm second generation process technology and a dedicated controller into a small package measuring only 11.5 x 13 x 1.0mm. It is compliant with JEDEC e MMCTM Version 5.0, published by JEDEC in September, and achieves a high read/write performance by applying the new HS400 high speed interface standard.

Toshiba will bring the NAND chips to a line-up of single-package embedded NAND flash memories in densities from 4GB to 128GB. All will integrate a controller to manage basic control functions for NAND applications.

New Product Line-up Product Name

Capacity

Package

Mass Production

THGBMBG8D4KBAIR

32GB

153Ball FBGA

11.5x13x1.0mm

End of November, 2013

THGBMBG7D2KBAIL

16GB

153Ball FBGA

11.5x13x0.8mm

End of November, 2013

Following 16GB and 32GB products, Toshiba will release 4GB, 8GB, 64GB and 128GB products in turn.

Key Features 1. The JEDEC e MMCTM V5.0 compliant interface handles essential functions, including writing block management, error correction and driver software. It simplifies system development, allowing manufacturers to minimize development costs and speed up time to market for new and upgraded products.

2. Embedded in a system, the 128GB module can record up to 2,222 hours of music at a 128Kbps bit rate, 16.6 hours of full spec high definition video and 38.4 hours of standard definition video[2].

3. The new products apply NAND flash memory chips fabricated with leading-edge 19nm second generation process technology.

4. The new products are sealed in a small FBGA package measuring just 11.5 x 13mm and has a signal layout compliant with the JEDEC e MMCTM V5.0.

Key Specifications Product Name

THGBMBG8D4KBAIR

THGBMBG7D2KBAIL

Interface

JEDEC e MMCTM V5.0 standard

HS-MMC interface

Capacity

32GB

16GB

Power Supply Voltage

2.7 3.6V (Memory core)

1.7V 1.95V / 2.7V 3.6V (Interface)

Bus Width

x1 / x4 / x8

Write Speed

90MB per sec.

(Sequential/HS400 Mode)

50MB per sec.

(Sequential/HS400 Mode)

Read Speed

270MB per sec.

(Sequential/HS400 Mode)

270MB per sec.

(Sequential/HS400 Mode)

Temperature Range

-25degrees to +85degees Celsius

Package

153Ball FBGA

11.5x13x1.0mm

153Ball FBGA

11.5x13x0.8mm

Note:

[1] e MMCTM is a trademark and a product category for a class of embedded memory products built to the JEDEC e MMCTM Standard specification.

[2] HD and SD are calculated at average bit rates of 17Mbps and 7Mbps, respectively.

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

LINK:	http://www.toshiba.co.jp/about/press/2013_10/pr3101.htm...
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